La Trobe

High-field magnetotransport studies of surface-conducting diamonds

journal contribution
posted on 2025-05-06, 04:11 authored by Kaijian Xing, DL Creedon, G Akhgar, Steve Yianni, JC McCallum, Lothar Ley, Dongchen QiDongchen Qi, Christopher PakesChristopher Pakes
The observation of a strong and tunable spin-orbit interaction (SOI) in surface-conducting diamond opens up a new avenue for building diamond-based spintronics. Herein we provide a comprehensive method to analyze the magnetotransport behavior of surface-conducting hydrogen-terminated diamond (H-diamond) Hall bar devices and Al/Al2O3/V2O5/H-diamond metal-oxide semiconductor field-effect transistors, respectively. By adopting a significantly improved theoretical magnetotransport model, the reduced magnetoconductance can be accurately explained both within and outside the quantum diffusive regime. The model is valid for all doping strategies of surface-conducting diamond tested. From this analysis, we find that the orbital magnetoresistance, a classical effect distinct from the SOI, dominates the magnetotransport in surface-conducting diamond at high magnetic fields. Furthermore, local hole mobilities as high as 1000-3000cm2/Vs have been observed in this work, indicating the possibility of diamond-based electronics with ultrahigh hole mobilities at cryogenic temperatures.

Funding

This work was supported by the Australian Research Council under the Discovery Project (No. DP150101673). D.-C.Q. acknowledges the support of the Australian Research Council (Grant No. FT160100207). D.-C.Q. acknowledges continued support from the Queensland University of Technology (QUT) through the Centre for Materials Science. D.L.C. is supported by Australian Research Council Grant No. DP190102852. K.X. is supported by Australian Research Council Grant No. DP200101345.

History

Publication Date

2022-06-17

Journal

Physical Review B

Volume

105

Article Number

245307

Pagination

8p.

Publisher

American Physical Society

ISSN

2469-9950

Rights Statement

© 2022 American Physical Society