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Development of a silicon–diamond interface on (111) diamond

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posted on 2025-02-27, 00:13 authored by Alex SchenkAlex Schenk, Michael Sear, N Dontschuk, A Tsai, KJ Rietwyk, Anton TadichAnton Tadich, BCC Cowie, Lothar Ley, A Stacey, Christopher PakesChristopher Pakes
We report the preparation of a silicon terminated (111) diamond surface. Low energy electron diffraction and core level photoemission demonstrate that this surface is highly ordered and homogeneous and possesses a negative electron affinity. Our analysis suggests that the surface reconstruction begins with the formation of silicon trimers that coalesce into a rhombohedral 2D silicon layer reminiscent of rhombohedral silicene.

Funding

Surface doping of diamond: A new platform for 2D carbon-based spintronics

Australian Research Council

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ARC Centre of Excellence for Quantum Computation and Communication Technology

Australian Research Council

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ARC Centre of Excellence in Exciton Science

Australian Research Council

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This work was supported by the Research Council of Norway through its Centres of Excellence funding scheme, Project No. 262633, "QuSpin", and the Fripro program, Project No. 250985 "FunTopoMat".

History

Publication Date

2020-02-18

Journal

Applied Physics Letters

Volume

116

Issue

7

Article Number

071602

Pagination

6p.

Publisher

AIP Publishing

ISSN

0003-6951

Rights Statement

© 2020 Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in: A. K. Schenk, M. J. Sear, N. Dontschuk, A. Tsai, K. J. Rietwyk, A. Tadich, B. C. C. Cowie, L. Ley, A. Stacey, C. I. Pakes; Development of a silicon–diamond interface on (111) diamond. Appl. Phys. Lett. 18 February 2020; 116 (7): 071602, https://doi.org/10.1063/1.5144093, and may be found at: https://pubs.aip.org/aip/apl/article/116/7/071602/38318/Development-of-a-silicon-diamond-interface-on-111

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    Keywords

    diamonddiamond surfacesphotoemission

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    In Copyright

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